Optimization of growth parameters to obtain epitaxial large area growth of molybdenum disulfide using pulsed laser deposition

2D transition metal dichalcogenides (TMDCs) are promising materials for device applications owing to their electronic, optical, and material properties varying with the number of monolayers. Synthesis large area crystalline TMDC thin films is still challenging techniques such as exfoliation chemical vapor growth uncontrollability deposition high temperature growths toxic precursors, respectively. Pulsed laser (PLD) a technique that can overcome these challenges stoichiometric layer by control optimizing parameters. In this study, we optimize parameters temperature, post-growth annealing, inert gas pressure, substrate–target distance during PLD MoS 2 obtain uniform highly on an ∼1 in. substrate. The optimized conditions 800 °C 30 min annealing at fluence 2.2 J/cm 5 cm 0.5 mTorr argon partial pressure. An RMS roughness 0.17 nm was obtained 3 (4 monolayers) thick film conductivity ∼4000 S/m.